PN EPI TECH Provided LPE  (Liquid Phase Epitary) growth method of GaAlAs Wafer

We provide GaAlAs High Power Infrared LED


IR LED Structure:
     - N side up (Cathode)
     - P side down (Anode)

LED size: Upon to customer specifications.
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Wavelengths range from 850 nm to 930 nm

GaAlAs IR LED Wavelengths: 850 nm, 860 nm, 870 nm, 880 nm, 890 nm, 900 nm, 910 nm, 920 nm,  930 nm.